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APTM50AM19F
Phase leg MOSFET Power Module
VDSS = 500V RDSon = 19mW max @ Tj = 25C ID = 163A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * * Benefits * * * *
G1 S1
VBUS
0/VBUS
OUT
S2 G2
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 500 163 122 652 30 19 1136 46 50 2500 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM50AM19F- Rev 1 May, 2004
Tc = 25C
APTM50AM19F
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 500A
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min 500 Tj = 25C Tj = 125C 3
Typ
Max 500 2000 19 5 200
Unit V A mW V nA
VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 163A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 163A RG = 1W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 163A, RG = 1 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 163A, RG = 1 Min Typ 22.4 4.8 0.36 492 132 260 18 35 87 77 3020 2904 4964 3384 J J ns Max Unit nF
nC
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 163A IS = -163A VR = 250V diS/dt = 400A/s IS = -163A VR = 250V diS/dt = 400A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 233 499 7.6 22.8 Min Typ Max 163 122 1.3 15 Unit A V V/ns ns C
APTM50AM19F- Rev 1 May, 2004
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150C IS - 163A di/dt 700A/s
APT website - http://www.advancedpower.com
2-6
APTM50AM19F
Thermal and package characteristics
Symbol Characteristic Junction to Case RthJC RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Torque Mounting torque To heatsink For terminals Wt Package Weight Min 2500 -40 -40 -40 3 2 150 125 100 5 3.5 280 Typ Max 0.11 Unit C/W V C N.m g
M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM50AM19F- Rev 1 May, 2004
APTM50AM19F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.9 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 700 ID, Drain Current (A) VGS=10&15V ID, Drain Current (A) 600 500 400 300 200 100 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 81.5A
Transfert Characteristics 500
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
8V 7.5V 7V 6.5V 6V 5.5V
400 300 200 100
TJ=25C TJ=125C TJ=-55C
0 25
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 160 140 120 100 80 60 40 20 0
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
VGS=10V
VGS=20V
100
200
300
400
25
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
APT website - http://www.advancedpower.com
4-6
APTM50AM19F- Rev 1 May, 2004
APTM50AM19F
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS, Gate to Source Voltage (V) 1000
limited by RDSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=81.5A
-50 -25
0
25
50
75 100 125 150
TJ, Junction Temperature (C) Maximum Safe Operating Area
100
limited by RDSon
100s
10 Single pulse TJ=150C 1 1
1ms 10ms 100ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=163A 12 T =25C J V =250V
CE
10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC)
VCE=400V
1000
Crss
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
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APTM50AM19F- Rev 1 May, 2004
APTM50AM19F
Delay Times vs Current 100 80 60 40 20 0 20 60 100 140 180 220 260 ID, Drain Current (A) Switching Energy vs Current 10 Switching Energy (mJ) 8 6 4 2 0 20 60 100 140 180 220 260 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 ID, Drain Current (A)
VDS=333V D=50% RG=1 TJ=125C VDS=333V RG=1 TJ=125C L=100H
Rise and Fall times vs Current
td(off)
120 100
tr and tf (ns)
VDS=333V RG=1 TJ=125C L=100H
td(on) and td(off) (ns)
tf
80 60 40 20 0 20
td(on)
tr
60
100
140
180
220
260
ID, Drain Current (A) Switching Energy vs Gate Resistance 16 Switching Energy (mJ) 14 12 10 8 6 4 2 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Eon
VDS=333V ID=163A TJ=125C L=100H
VDS=333V RG=1 TJ=125C L=100H
Eon
Eoff
Eoff
IDR, Reverse Drain Current (A)
400
1000
TJ=150C 100
10
TJ=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM50AM19F- Rev 1 May, 2004

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